Groupe Puissance

Groupe Puissance
Articles dans une revue internationale avec comité de lecture - Papiers réguliers
Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a
transport-thermal modeling
BENBAKHTI B., ROUSSEAU M., SOLTANI A., DE JAEGER J.C.
IEEE Trans. Electron Devices, 53, 9 (2006) 2237-2242
doi: 10.1109/TED.2005.881014
Current conduction and saturation mechanism in AlGaN/GaN ungated structures
KUZMIK J., BYCHIKHIN S., POGANY D., GAQUIERE C., MORVAN E.
J. Appl. Phys., 99, 12 (2006) 123720-1-7
doi: 10.1063/1.2207572
Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2
BENMOUSSA A., HOCHEDEZ J.F., SCHÜHLE U., SCHMUTZ W., HAENEN K., STOCKMAN Y.,
SOLTANI A., SCHOLZE F., KROTH U., MORTET V., THEISSEN A., LAUBIS C., RICHTER M.,
KOLLERC S., DEFISE J.M., KOIZUMI S.
Diam. Relat. Mater., 15, 4-8 (2006) 802-806
doi: 10.1016/j.diamond.2005.10.024
High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate
WERQUIN M., DUCATTEAU D., VELLAS N., DELOS E., CORDIER Y., AUBRY R., GAQUIERE C.
Microw. Opt. Technol. Lett., 48, 11 (2006) 2303-2305
doi: 10.1002/mop.21897
Influence of the deposition parameters on the texture of boron nitride thin films synthesized in a
microwave plasma-enhanced reactor
THÉVENIN P., ELIAOUI M., AHAITOUF A., SOLTANI A., BATH A.
Surf. Coat. Technol., 200, 22-23 (2006) 6444-6448
doi: 10.1016/j.surfcoat.2005.11.096
LYRA, a solar UV radiometer on Proba2
HOCHEDEZ J.F., SCHMUTZ W., STOCKMAN Y., SCHÜHLE U., BENMOUSSA A., KOLLER S.,
HAENEN K., BERGHMANS D., DEFISE J.M., HALAIN J.P., THEISSEN A., DELOUILLE V., SLEMZIN V.,
GILLOTAY D., FUSSEN D., DOMINIQUE M., VANHELLEMONT F., MAC MULLIN D., KRETZSCHMAR
M., MITROFANOV A., NICULA B., WAUTERS L., ROTH H., ROZANOV E., RUEDI I., WEHRLI C.,
SOLTANI A., AMANO H., VAN DER LINDEN R., ZHUKOV A., CLETTE F., KOIZUMI S., MORTET V.,
REMES Z., PETERSEN R., NESLADEK M., D'OLIESLAEGER M., ROGGEN J., ROCHUS P.
Adv. Space Res., 37, 2 (2006) 303-312
doi: 10.1016/j.asr.2005.10.041
Output power density of 5.1W/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
DUCATTEAU D., MINKO A., HOEL V., MORVAN E., DELOS E., GRIMBERT B., LARECHE H., BOVE P.,
GAQUIERE C., DE JAEGER J.C., DELAGE S.L.
IEEE Electron Device Lett., 27, 1 (2006) 7-9
doi: 10.1109/LED.2005.860385
Performance of diamond detectors for VUV applications
BENMOUSSA A., THEISSEN A., SCHOLZE F., HOCHEDEZ J.F., SCHUHLE U., SCHMUTZ W.,
HAENEN K., STOCKMAN Y., SOLTANI A., MCMULLIN D., VEST R.E., KROTH U., LAUBIS C.,
RICHTER M., MORTET V., GISSOT S., DELOUILLE V., DOMINIQUE M., KOLLER S., HALAIN J.P.,
REMES Z., PETERSEN R., D’OLIESLAEGER M., DEFISE J.M.
Nucl. Instrum. Methods Phys. Res., Sect. A Accel. Spectrom. Detect. Assoc. Equip., 568, 1 (2006)
398-405
doi: 10.1016/j.nima.2006.06.007
Power measurement setup for large signal microwave characterization at 94 GHz
MEDJDOUB F., VANDENBROUCK S., GAQUIERE C., DELOS E., ZAKNOUNE M., THERON D.
IEEE Microw. Wirel. Compon. Lett., 16, 4 (2006) 218-220
doi: 10.1109/LMWC.2006.872111
Punch-through in short-channel AlGaN/GaN HFETs
UREN M.J., NASH K.J., BALMER R.S., MARTIN T., MORVAN E., CAILLAS N., DELAGE S.L.,
DUCATTEAU D., GRIMBERT B., DE JAEGER J.C.
IEEE Trans. Electron Devices, 53, 2 (2006) 395-398
doi: 10.1109/TED.2005.862702
Small-signal characteristics of AlInN/GaN HEMTs
MEDJDOUB F., CARLIN J.F., GONSCHOREK M., PY M.A., GRANDJEAN N., VANDENBROUCK S.,
GAQUIERE C., DE JAEGER J.C., KOHN E.
Electron. Lett., 42, 13 (2006) 779-780
doi: 10.1049/el:20060768
Terahertz detection by GaN/AlGaN transistors
EL FATIMY A., TOMBET S.B., TEPPE F., KNAP W., VEKSLER D.B., RUMYANTSEV S., SHUR M.S.,
PALA N., GASKA R., FAREED Q., HU X., SELIUTA D., VALUSIS G., GAQUIERE C., THERON D.,
CAPPY A.
Electron. Lett., 42, 23 (2006) 1342-1344
doi: 10.1049/el:20062452
The effect of oxidation on physical properties of porous silicon layers for optical applications
PIRASTEH P., CHARRIER J., SOLTANI A., HAESAERT S., HAJI L., GODON C., ERRIEN N.
Appl. Surf. Sci., 253, 4 (2006) 1999-2002
doi: 10.1016/j.apsusc.2006.03.083
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and
sapphire substrates
SGHAIER N., TRABELSI M., YACOUBI N., BLUET J.M., SOUIFI A., GUILLOT G., GAQUIERE C., DE
JAEGER J.C.
Microelectronics J., 37, 4 (2006) 363-370
doi: 10.1016/j.mejo.2005.05.014
Articles dans une revue internationale avec comité de lecture - Conférences
Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy
GASSOUMI M., BLUET J.M., CHEKIR F., DERMOUL I., MAAREF H., GUILLOT G., MINKO A., HOEL V.,
GAQUIERE C.
4th Maghreb/Europe Meeting on Material and Their Applications for Devices and Physical, Chemical and
Biological Sensors, MADICA 2004, Tunis, Tunisie, november 29-december 1, 2004
Mater. Sci. Eng. C, Biomet. Supramol. Syst., 26, 2-3 (2006) SI : 383-386
doi: 10.1016/j.msec.2005.10.033
Conférences invitées
Large signal microwave characterization of GaN HEMTs
THERON D., WERQUIN M., GRIMBERT B., DUCATTEAU D., VANDENBROUCK S., GAQUIERE C.
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD'06, Phoenix, AZ, USA,
february 19-22, 2006
Communications internationales avec actes
Présentation orale
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?
MEDJDOUB F., CARLIN J.F., GONSCHOREK M., FELTIN E., PY M.A., DUCATTEAU D., GAQUIERE C.,
GRANDJEAN N., KOHN E.
Proceedings of the 2006 IEEE International Electron Devices Meeting, IEDM 2006, San Francisco, CA,
USA, december 11-13, 2006, 673-676, ISBN : 978-1-4244-0438-4
doi: 10.1109/IEDM.2006.346935
Design of a X-band GaN oscillator : from the low frequency noise device characterization and large signal
modeling to circuit design
SOUBERCAZE-PUN G., TARTARIN J.G., BARY L., RAYSSAC J., MORVAN E., GRIMBERT B., DELAGE
S.L., DE JAEGER J.C., GRAFFEUIL J.
2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, USA, june 11-16,
2006, 747-750
doi: 10.1109/MWSYM.2006.249760
Influence of surface trapping on determination of electron saturation velocity in AlGaN/GaN
heterostructure
KUZMIK J., BYCHIKHIN S., PICHONNAT E., GAQUIERE C., MORVAN E., POGANY D.
Proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS-28, Vienna,
Austria, july 24-28, 2006
Investigation of the cooling effect introduced by the airbridge structure in the multifinger AlGaN/GaN
HEMTs
KUZMIK J., BYCHIKHIN S., LOSSY R., WURFL H.J., DI FORTE-POISSON M.A., TEYSSIER J.P.,
GAQUIERE C., POGANY D.
Proceedings of the 30th Workshop on Compound Semiconductor Devices and Integrated Circuits,
WOCSDICE 2006, Fiskebäckskil, Sweden, may 14-17, 2006, 181-183
Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering
spectroscopy and transient interferometric mapping
PICHONAT E., KUZMIK J., BYCHIKHIN S., POGANY D., POISSON M.A., GRIMBERT B., GAQUIERE C.
Proceedings of the 2006 1st European Microwave Integrated Circuits Conference, EuMIC 2006,
Manchester, UK, september 10-13, 2006, 54-57, ISBN : 978-2-9600551-8-4
doi: 10.1109/EMICC.2006.282748
Terahertz detection by GaN-based field-effect-transistors and heterodimensional Schottky diodes
VEKSLER D.B., EL FATIMY A., DYAKONOVA N., TEPPE F., KNAP W., PALAA N., GASKA R., FAREED
Q., HU X., RUMYANTSEV S., SHUR M.S., SELIUTA D., VALUSIS G., BOLLAERT S., SHCHEPETOV A.,
ROELENS Y., GAQUIERE C., THERON D., CAPPY A.
Proceedings of the 2006 International Workshop on Nitride Semiconductors, IWN2006, Kyoto, Japan,
october 22-27, 2006
Thermal boundary resistance between GaN layer and different substrates determined by transient
electrical and optical interferometry methods
KUZMIK J., BYCHIKHIN S., LOSSY R., WURFL J., DI FORTE-POISSON M.A., TEYSSIER J.P.,
GAQUIERE C., KOHN E., POGANY D.
Proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS-28, Vienna,
Austria, july 24-28, 2006, 306
Présentation par affiche
Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications
BENBAKHTI B., ROUSSEAU M., DE JAEGER J.C.
Proceedings of the 2006 1st European Microwave Integrated Circuits Conference, EuMIC 2006,
Manchester, UK, september 10-13, 2006, 363-366
doi: 10.1109/EMICC.2006.282657
Communications sans actes
Analyse physique de transistors HEMTs AlGaN/GaN élaborés avec la technologie field plate
BENBAKHTI B., ROUSSEAU M., GERBEDOEN J.C., DE JAEGER J.C.
10èmes Journées de la Matière Condensée, Toulouse, France, 28 août-1er septembre, 2006
Conception et réalisation de transistors HEMT AlGaN/GaN avec différentes topologies fieldplate
GERBEDOEN J.C., SOLTANI A., BENBAKHTI B., DE JAEGER J.C.
10èmes Journées de la Matière Condensée, Toulouse, France, 28 août-1er septembre, 2006
Surface capping of AlInN/GaN HEMT structures
MEDJDOUB F., DUCATTEAU D., GAQUIERE C., CARLIN J.F., GONSCHOREK M., FELTIN E., PY M.A.,
GRANDJEAN N., KOHN E.
European Workshop on III-Nitride Semiconductor Materials and Devices, EW3NS, Heraklion, Crete,
Greece, september 18-20, 2006
Thermal characterization of HF power FETs
POGANY D., KUZMIK J., BYCHIKHIN S., PICHONAT E., GAQUIERE C., ANDERSSON K., FAGER C.,
WURFL J., POISSON M.A.
TARGET Days - TARGET meets Industry, Frascati, Italy, october 16-18, 2006
Thèses
Analyse physique et thermique de transistors à effet de champ de la filière GaN. Optimisation de
structures pour l'amplification de puissance hyperfréquence
BENBAKHTI B.
Thèse de doctorat en Microondes et Microtechnologies, Université de Lille1, 14 décembre 2006
Total pour le groupe Puissance : 29 publication(s).
Collaboration avec d'autres groupes
Articles dans une revue internationale avec comité de lecture - Papiers réguliers
Room-temperature terahertz emission from nanometer field-effect transistors
DYAKONOVA N., FATIMY A.E., LUSAKOWSKI J., KNAP W., DYAKONOV M.I., POISSON M.A.,
MORVAN E., BOLLAERT S., SHCHEPETOV A., ROELENS Y., GAQUIERE C., THERON D., CAPPY A.
Appl. Phys. Lett., 88, 14 (2006) 141906-1-3
doi: 10.1063/1.2191421
Communications internationales avec actes
Présentation orale
Room-temperature terahertz emission from nanometer field-effect transistors
DYAKONOVA N., FATIMY A.E., LUSAKOWSKI J., KNAP W., DYAKONOV M.I., POISSON M.A.,
MORVAN E., BOLLAERT S., SHCHEPETOV A., ROELENS Y., GAQUIERE C., THERON D., CAPPY A.
Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th
International Conference on Terahertz Electronics, IRMMW-THz2006, Shanghai, China, september 18-22,
2006, 145, ISBN: 978-1-4244-0399-8
doi: 10.1109/ICIMW.2006.368353
Communications sans actes
Etude par microscopie à champ proche de structures à base de matériaux III-N pour émetteurs
électroniques planaires
BARBET S., AUBRY R., POISSON M.A., MELIN T., THERON D.
10èmes Journées de la Matière Condensée, Toulouse, France, 28 août-1er septembre, 2006
KFM analysis of GaN surfaces
BARBET S., AUBRY R., POISSON M.A., MELIN T., THERON D.
15th European Workshop on Heterostructure Technology, HeTech'06, Manchester, UK, october 2-4, 2006
Total des collaborations avec d'autres groupes : 4 publication(s).