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Intitulé
Descriptif
Silicon-based THz power sources in nm (Bi)CMOS processes
Introduction
Silicon-based imagers in the visible and near-infrared spectral bands have already
generated enormous business opportunities worldwide, with continuing growth
in markets such as cell phones, automotive safety, authentication, and security
systems. Imaging sensor revenues of more than $4B were expected in 2009 at the
component level alone.
Similarly, applications in the terahertz spectral band would profit massively from
the capabilities of silicon process technologies making possible affordable and
reliable imagers, notably in the industrial safety and security areas, biomedical,
agriculture and wellness. In particular the high integration capability of silicon
process technologies renders them an enabler for entirely new imaging concepts
that are not feasible in any other terahertz technology.
State of the art context: The most recent research work at the Bergische
Universität Wuppertal in collaboration with STMicroelectronics and IEMN/ISEN
Lille has led to the development of the world-first large-count 1 k-pixel camera in
a bulk 65 nm CMOS process with a full video rate capability and a completely
integrated read-out circuitry [Sherry 12], work presented in February 2012 at our
major conference, ISSCC. The 32 x 32 FPA exhibits a pixel pitch as small as 80 μm,
defined by a novel on-chip ring antenna, and is designed to accommodate silicon
lens optics for a wide operation bandwidth of 0.6-1 THz. The camera operates at
25 fps consuming 2.5 μW/pixel, fully integrated in 65nm CMOS with no specific
options. This work has been highly recognized at our major conference, ISSCC,
and has very recently
See also: http://spectrum.ieee.org/semiconductors/optoelectronics/a-cheapterahertz-camera
The work targeted for this PhD candidate aims to continuing the work done since
3 years in collaboration with Bergische Universität Wuppertal, now taking in
charge the feasibility of Silicon integrated power sources in the frequency range
of 300 to 1000 GHz . The target processes are 65nm CMOS, 55nm BiCMOS and
28nm FDSOI CMOS. The student will work inside an interdisciplinary team of
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microelectronic designers, antenna designers, THz imaging experts, THz
metrology experts.
PhD Study Subject Description
Within the frame of this thesis, we aim to achieve a breakthrough in (Bi)CMOS
integrated power sources in the THz frequency range by applying new design
ideas. Recent state of the art [Tousi 12], [Zhao 12] has proven the power sources
feasibility in 65nm CMOS at about 300GHz, with an output power of about 0
dBm and a tuning range around 4.5%.
The target of this work is to prove feasibility of THz power sources and with
industrial design margin, with output frequencies in the range of 600 to 900GHz,
and an equivalent radiated output power around 15dBm. The PhD student will have
to master the following skills:
- RF and mmW design, and especially oscillators theory
- mmW EM modeling for passive devices; Silicon integrated antenna design
- good semiconductor physics knowledge for active devices
This thesis defines itself as pioneer work regarding two different aspects: future
applications and market fields for ST and utmost limits of advanced (Bi)CMOS
technologies.
PhD Study Planning
1. Bibliography study on the targeted applications and imaging techniques at
mmWave and THz range (integrated or discrete approach) => 1 months
2. Oscillator theory study, Active device modeling and passive structures study => 2
months
3. First THz power source design and implementation => 9 months
4. Second implementation: circuit design and measurement techniques => 9
months
5. System implementation chip: implementation and measurements => 12 months
6. PhD Defense writing => 3 months
PhD Thesis Organisation and Functioning
This CIFRE PhD thesis will be supervised as follows:
- University supervising:
o Professor Ullrich Pfeiffer from University of Wuppertal, Germany; 50% timing
o Professor (Directeur de Recherche CNRS) Andreas Kaiser from ISEN/IEMN; 20%
timing
- Industrial supervising:
o Andreia Cathelin from STMicroelectronics, TR&D / CCDS / PIMDS; 30% timing
This thesis will benefit from the international scientific reputation of both university
laboratories and specially the professors to carry out this difficult PhD subject. IHCT
laboratory from University of Wuppertal, under the name of Professor Pfeiffer, has
uncontested international scientific leadership concerning integrated CMOS
imagers for mmWave/THz detection. ISEN/IEMN, under the name of professor
Kaiser, is well known among the international scientific community for his work in
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the field of analog circuits.
Part of this thesis is considered in the frame of ST/IEMN Common Lab, and in the
“mmWave thematic platform”.
The PhD thesis should start by October 2013 and finish by October 2016. The
chosen candidate may be registered as PhD student either at Wuppertal, Germany,
or at Lille Universities, France (depending on his/her nationality).
The timing repartition is the following:
- from Oct 2013 to Dec 2015, the PhD student will be based at Wuppertal University
and ISEN/IEMN Lille;
- from Jan 2016 till the end of the thesis, the PhD student will be based at
STMicroelectronics Crolles.
When needed, the PhD student may spend a period of time on the other working
places, for specific activities (measurements, design with specific CAD tools, ….)
Reporting: Every 6 months, the PhD student has to provide a detailed scientific
report to all the parties on the work done so far. Every 2 months, work
advancement meetings will be organized to insure the follow-up and a good cooperation between the different parties.
The work generated from this PhD study will give place to internal presentations
inside the two university labs and the company, and also to international
conferences and symposia presentations. International journal paper writing, as
well as patent filing, are strongly encouraged.
References:
[Momeni 11a] O. Momeni, E. Afshari, "A Broadband mm-Wave and Terahertz
Traveling-Wave Frequency Multiplier on CMOS," Solid-State Circuits, IEEE Journal of
, vol.46, no.12, pp.2966-2976, Dec. 2011
[Seo 11] M. Seo, M. Urteaga, J. Hacker, A.Young, Z.Griffith, V. Jain, R. Pierson, P.
Rowell, A. Skalare, A. Peralta, R. Lin, D. Pukala, M. Rodwell, "InP HBT IC Technology
for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz," Solid-State
Circuits, IEEE Journal of , vol.46, no.10, pp.2203-2214, Oct. 2011
[Wanner 05] R. Wanner, R. Lachner, G.R. Olbrich, "A monolithically integrated 190GHz SiGe push-push oscillator,"Microwave and Wireless Components Letters, IEEE ,
vol.15, no.12, pp. 862- 864, Dec. 2005
[Schuster 11] F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L.
Dussopt, B. Giffard, T. Skotnicki, W.Knapp, “Broadband terahertz imaging with
highly sensitive silicon CMOS detectors,” Optics Express, vol. 19, 2011.
[Sherry 11] H. Sherry, R. Al Hadi, J. Grzyb, E. Öjefors, A. Cathelin, A. Kaiser, and U. R.
Pfeiffer, “Lens-integrated THz im
[Hadi 11] R. Al Hadi, H. Sherry, J. Grzyb, N. Baktash, Y. Zhao, E. Öjefors, A. Kaiser, A.
Cathelin, and U. Pfeiffer, “A broadband 0.6 to 1 THz CMOS imaging detector with an
integrated lens,” IMS, Baltimore, MD, 6 2011.
[Sherry 12] H. Sherry, J.Grzyb, Yan Zhao, R. Al Hadi,A. Kaiser,A. Cathelin,U. Pfeiffer,
“A 1k-Pixel CMOS Camera Chip for 25fps Real-Time Terahertz Imaging
Applications”, International Solid State Circuits Conference, Paper 15.1, 2012
[Tousi 12] A Novel CMOS High-Power Terahertz VCO Based on Coupled Oscillators:
Theory and Implementation, Tousi, Y.M.; Momeni, O.; Afshari, E. , IEEE Journal of
Solid-State Circuits, Volume: 47 , Issue: 12 , Page(s): 3032 – 3042
[Zhao 12] A 288-GHz lens-integrated balanced triple-push source in a 65-nm CMOS
technology, Yan Zhao; Grzyb, J.; Pfeiffer, U.R., 2012 Proceedings of the ESSCIRC
(ESSCIRC), , Page(s): 289 - 292
Niveau d’étude requis
Ingénieur en Microélectronique ; Master of Science
Compétences requises
- analog and RF, mmW design
- EM simulations
- semiconductor physics
- oscillators
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Dates et lieu de la
thèse
The timing repartition is the following:
- from Oct 2013 to Dec 2015, the PhD student will be based at Wuppertal University
and ISEN/IEMN Lille;
- from Jan 2016 till the end of the thesis, the PhD student will be based at
STMicroelectronics Crolles.
Andreia CATHELIN [email protected]
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