MARDI 5 OCTOBRE TUESDAY, OQOBER 5th SESSION 0 9H00 10

MARDI 5 OCTOBRE
TUESDAY, OQOBER 5th
SESSION 0
SESSION 0
SESSION D'OUVERTURE
9H00
10 H 20
9.00
OPENING SESSION
10.20
Allocutions de bienvenue
Welcoming speeches
SESSION I
LITHOGRAPHIE
A FAISCEAU
D'ELECTRONS
10 H 20
12 H 20
Chairman
: H
'
A H M E D
SESSION I
10.20
12.20
E. BEAM LITHOGRAPHY
' UNIVERSITY ENGINEERING DEPARTMENT, CAMBRIDGE, UK
Etat da la lithographie a faisceau d'6lectrons chez IBM
Status of the IBM E. beam lithography
P.A. CARDENIA, R. D. MOORE, IBM, HOPEWELL JUNCTION, USA
EB-7000, un systeme rapide de lithographie 6/ectronique a spot variable pour I'inscription
directe sur plaquettes
EB-7000, a variable shaped beam high speed electron lithography system for direct wafer
exposure
BERNHARD P. PIWCZYK, GCA CORPORATION, BURLINGTON DIVISION, BEDFORD, USA
Architecture du logiciel du systeme FEPG
Software architecture of FEPG system
J.N. CONTENSOU, CAMECA, COURBEVOIE, FRANCE
J. TROTEL, THOMSON-CSF/SML, ORSAY, FRANCE
Un systeme de lithographie Glectronique pour la fabrication de microstructures avec des
details interiaurs a 1000 A °
An E. beam lithography system for microfabrication of structures with minimum dimensions below 1000 A °
P.J. COANE, D.P. KERN, A.J. SPETH, T.H.P. CHANG, IBM, YORKTOWN HEIGHTS, USA
Technique d'imagerie en surface, en lithographie 6/ectronique
Top edge imaging in E. beam lithography
S.J. GILLESPIE, IBM, GENERAL TECHNOLOGY DIVISION, ESSEX JUNCTION, USA
http://d-nb.info/1010780026
11
374
16
SESSION 1 (suite)
LITHOGRAPHIE
A FAISCEAU
D'ELECTRONS
14 H 20
15 H 00
SESSION I
(continuation)
14.20
15.00
E. BEAM LITHOGRAPHY
Programme de correction d'effet de proximity pour lithographie 6lectronique utilisant un
tableau de pond6ration polyvalent
A proximity correction program for E. beam lithography using a versatile look-up table
method
22
P. HENDY, M.E. JONES, BRITISH TELECOMMUNICATIONS RESEARCH LABORATORIES, IPSWICH, UK
Detection des mires en lithographie 6lectronique a haute tension
Mark detection in high voltage E. beam lithography
28
YOSHIHIDE KATO, T. TAKIGAWA, M. YOSHIMI, K. KAWABUCHI, TOSHIBA CORPORATION,
TOSHIBA RESEARCH AND DEVELOPMENT CENTER, KAWASAKI, JAPAN
SESSION II
15 H 20
17 H 20
Chtinnan :
SESSION II
MICROSTRUCTURES
Dr E D
' -
WOLF
15.20
17.20
MICROSTRUCTURES
' PHILIPS HALL, ITHACA, USA
Conference invitee :
Techniques de fabrication pour disposKHs submicroniques
Invited paper:
Microfabrication techniques for submicron devices
Joseph M. BALLANTYNE, SCHOOL OF ELECTRICAL ENGINEERING-NATIONAL
RESEARCH AND RESOURCES FACILITY FOR SUBMICRON STRUCTURES, CORNELL
UNIVERSITY, ITHACA, USA
35
44
Fabrication de N-MOS a canal court par masquage 6lectronique direct
The fabrication of very short gate length N-channel MOSFET's by direct E. beam exposure
C.E. BINNIE, S.P. BEAUMONT, C.D.W. WILKINSON, UNIVERSITY OF GLASGOW, GLASGOW,
UK
J.C. WHITE, ROYAL SIGNALS AND RADAR ESTABLISHMENT, GREAT MALVERN, UK
Fabrication de dispositifs pour communications optiques a I'aide de masquage 6lectroniqua
E. beam fabrication of devices for optical communication systems
50
P.G. FLAVIN, C.DIX, M.E. JONES, BRITISH TELECOMMUNICATIONS RESEARCH LABORATORIES, IPSWICH, UK
Le masquage dlectronique et la gravure ionique inactive applique's a la fabrication de 56
MOSFETS submicroniques
Submicron devices fabrication using E.beam masking and R.I.E.
P. PARRENS, F. BUIGUEZ, CENG/LETI, GRENOBLE, FRANCE
Fabrication d'un r6seau sur un substrat non plan par lithographie 6/ectronique
Fabrication of a grid on a non-flat substrate by E. beam lithography
M.E. ROULET, L. STAUFFER, H.W. LUGINBUHL, C.E.H., NEUCHATEL, SWITZERLAND
61
WEDNESDAY, OCTOBER 6th
MERCREDI 6 OCTOBRE
SESSION III
^ ^ ^ ^ ^ H
^ ^ ^ ^ ^ H
12 H 40
^ ^ ^ ^ ^ H i
LITHOGRAPHIE
OPTIQUE
^ ^ ^ ^ ^ ^ H
••••
1I
I
1
SESSION III
9.00
12.40
OPTICAL LITHOGRAPHY
Pr6sident .
M. HUGUES, CERCO, ORSAY, FRANCE
Chairman'
Objectifs pour la microlithographie : 6tat de /'art et perspectives d'avenir
Lenses for microlithography; state-of-the art and future developments
C. BABOLAT, CERCO, LES ULIS, FRANCE
65
Lithographie rapide a haute resolution, en UV profond, uti/isant des lasers excimeres
Ultrafast deep UV lithography with excimer lasers
K. JAIN, C.G. WILLSON, IBM, SAN JOSE RESEARCH LABORATORY, SAN JOSE, USA
B.J. LIN, IBM T.J. WATSON RESEARCH CENTER, YORKTOWN HEIGHTS, USA
59
Laser exipiexe KrF comme future source en UV profond pour la projection optique
KrF excimer laser as a future deep UV source for projection printing
G.M. DUBROEUCQ, D. ZAHORSKY, THOMSON-CSF/SML, ORSAY, FRANCE
73
Lithographie UVsur Perkin Elmer 500 avec du photoresist AZ 4110 : analyse multiparame'- 79
trique et Evaluation du proc6d6
MID UV Perkin Elmer 500 lithography with AZ4110 resist: a muitifactorial tool and process
evaluation
J.P. ROBIC, S. KNIGHT, W. STRAUB, IBM, GENERAL TECHNOLOGY DIVISION, ESSEX JUNCTION, USA
Dispositif pour la reproduction des masques dans le domaine V. U. V.
89
V. U. V. microlithographie device for mask reproduction
M. POUEY, UNIVERSITE PARIS XI, LABORATOIRE DE PHYSIQUE DES GAZ ET DES PLASMAS, ORSAY, FRANCE
Amelioration de la resolution photolithographique par I'usage d'un masque a d6phasage 93
Improved photolithographic resolution with a phase shifting mask
D. GOODMAN, M.D. LEVENSON, H. SANTINI, V. VISWANATHAN, IBM RESEARCH LABORATORY, SAN JOSE, USA
Utilisation de riseaux a double diffraction comma mires d'alignement: realisation et 99
r6sultats obtenus sur le r6p6taur ARW
Double diffraction gratings as registration marks: design and performance on the ARW
wafer stepper
G.M. DUBROEUCQ, D. SULLEROT, M. LACOMBAT, THOMSON-CSF/SML, ORSAY, FRANCE
A. PROLONGE, E. TONNEL, THOMSON-CSF/DCI, ST-EGREVE, FRANCE
Photorepetition directe sur tranches. Les limites de I'optique appliqu6e a la fabrication de 105
structures submicroniques
Direct stepping on wafer, limits of opticals in submicron devices fabrication
B. PICARD, P. PARRENS, CENG/LETI, GRENOBLE, FRANCE
SESSION IV
SESSION IV
LITHOGRAPHIE
A RAYONS X
14H30
16 H 10
CtMirrnan :
M
'
LEPSELTER
'
BELL
14.30
16.10
X-RAYS LITHOGRAPHY
LABORATORIES, MURRAY HILL, USA
Masques rayons X : realisation de la couche d'absorption par metallisation a compensa111
tion de contraintes ; influence sur la distorsion du masque
Stress compensated absorber-metallizations on X-ray masks and their influence on mask distortion
A. BRUNS, M. HARMS, H. LUTHJE, PHILIPS, HAMBURG, FRG
B. MATTHIESSEN, VALVO, HAMBURG, FRG
Systeme d'alignement automatique pour microlithographie submicronique a rayons X
116
Automatic alignment system for submicron X-ray lithography
B. FAY, A. CORNETTE, J.P. NIVOLIERS, THOMSON-CSF/LCR, ORSAY, FRANCE
Conception de mini-anneau de stockage d'eiectrons pour application en lithographie par RX
Design of a compact electron storage ring for X-rays microlithography
122
E. GRORUD, J.L. LACLARE, J.M. LEFEBVRE, G. LELEUX, CEN SACLAY/LNS, FRANCE
F. KIRCHER, CEN SACLAY/DPhPE-STIPE, FRANCE
P. PARRENS, CENG/LETI-MSC, GRENOBLE, FRANCE
Anneau a aimants permanents pour la microlithographie
Electron storage ring using permanent magnets for microlithography
127
J. LE DUFF, Y. PETROFF, UNIVERSITE PARIS-SUD/LURE, ORSAY, FRANCE
Optimisation des parametres de sources a plasma pulse pour la lithographie rayons-X
130
Parameters optimization of pulsed plasma sources for X-ray lithography
ROBERT A. GUTCHECK, JULIUS J. MURAY, SRI INTERNATIONAL, MENLO PARK, USA
Perspectives d'app/ication des m6thodes d'optiques de diffraction pour la lithographie rayons X
Prospects for the applications of methods of diffraction optics to X-ray lithography
137
V.V. ARISTOV, A.I. ERKO, Ch. V. KOPEZKY, USSR ACADEMY OF SCIENCES, SOLID-STATE
PHYSICS INSTITUTE, MOSCOW-USSR
SESSION V
SESSION V
16H30
18 H 10
LITHOGRAPHIE
A FAISCEAU D IONS
16.30
18.10
ION BEAM LITHOGRAPHY
President
Chairman' M. SLODZIAN , ONERA, CHATILLON SOUS BAGNEUX, FRANCE
Caracteristiques de systemes a faisceau d'ions filtr6s finement focalis6 ; technique de 143
fabrication sans masque
Characteristics of mass-separated fine focussed ion beam system and maskless fabrication
K. GAMO, Y. INOMOTO, Y. OCHIAI, S. NAMBA, OSAKA UNIVERSITY, FACULTY OF ENGINEERING SCIENCE, OSAKA, JAPAN
Fabrication de structures submicroniques par lithographie a faisceau d'ions
148
Fabrication of sub-micron structures by scanning ion beam lithography
J.R.A. CLEAVER, P.J. HEARD, H. AHMED, CAMBRIDGE UNIVERSITY, UK
Etude d'une source ionique a Gallium liquide en vue d'application a la microlithographie 154
Study of a liquid Gallium, ion source for application in microlithography
G. GARRY, D. DIEUMEGARD, M. CROSET, THOMSON-CSF/LCR, ORSAY, FRANCE
P. SUDRAUD, J. VAN DE WALLE, UNIVERSITE PARIS-SUD, LAB. PHYS. DES SOLIDES, ORSAY, FRA
Lithographie ionique en projection : etude de la stability du masque
159
Ion beam shadow printing: beam effects on mask stability
L. CSEPREGI, P. EICHINGER, A. HEUBERGER, FRAUNHOFER INSTITUT FUR FESTKORPERTECHNOLOGIE, MUNCHEN, FRG
Simulation des propri6t6s des polymeres utilises comme r6sines iono-sensibles
165
Simulation of the lithographic properties of ion-beam resists
K. HOFFMANN, K. HABERGER, M. FORSTER, H. RYSSEL, FRAUNHOFER FUR FESTKORPERTECHNOLOGIE, MUNCHEN, FRG
JEUDI 7 OCTOBRE
SESSION VI
SESSION VI
INSPECTION
9 H 00
12 H 20
Chairman :
THURSDAY, OCTOBER 7th
M
'
PRUNIAUX
9.00
12.20
INSPECTION
- EUROTECHNIQUE, ROUSSET, FRANCE
Conference invitee :
Les techniques d'inspection par faisceaux d'eJectrons
171
Invited paper:
E. beam testing : methods and applications
H.P. FEUERBAUM, SIEMENS, ZENTRAL FORSCHUNGSLABORATORIUM, MUNCHEN,
FRG
Inspection des masques rayons X par faisceau d'6lectrons
179
X-ray mask inspection using a vector scan E. beam system
MICHAEL G. ROSENFIELD, ANDREW R. NEUREUTHER, UNIVERSITY OF CALIFORNIA, BERKELEY, USA
R. VISWANATHAN, ALAN D. WILSON, P. VETTIGER, IBM, YORKSTOWN HEIGHTS, USA
Inspection et controie des circuits a /'aide de /'enregistrement
sur bande du signal video
en provenance d'un M.E.B.
1G3
Inspection of a TMS9995 16 bits microprocessor VLSI using video tape recording from a
scanning electron
microscope
S.C.J. GARTH, W.C. NIXON, CAMBRIDGE UNIVERSITY, UK
Impact des defauts de masque sur le rendement des circuits int6gr6s
Impact of mask defects on IC's yield
J. LE CARPENTIER, RTC LA RADIOTECHNIQUE COMPELEC, CAEN, FRANCE
187
Exempie de mesure eiectrique et d'anaiyse des erreurs de superposition dans la lithographie des plaquettes de circuits Integra's
192
M. DEPEY, A. PROLONGE, E. TONNEL, THOMSON-CSF, DIVISION CIRCUITS INTEGRES,
SAINT EGREVE, FRANCE
MCM-1: un systeme automatique d'inspection des reticules
193
An automated reticle defects inspection system: MCM-1
S. SANO, S. SASAKI, T. TOJO, H. KUSAKABE, R. YOSHIKAWA, 0. IKENAGA, TOSHIBA
RESEARCH CENTER, KAWASAKI, JAPAN
Utilisation du Laserscan pour le controie automatique des reticules
Automatic reticle inspection using Laserscan
J.P. PAPET, THOMSON-EFCIS, GRENOBLE, FRANCE
19C
SESSION V I I
SESSION V I I
14H30
17H30
Crwi'rmen :
GRAVURE ETTRANSFERT
M> DIELEMAN
14.30
17.30
ETCHING AND
IMAGES TRANSFER
< PHILIPS, EINDHOVEN, THE NETHERLANDS
Conference invitee :
Les techniques modemes de gravure en microlithographie
Invited paper:
203
Advanced etching process
Y. HORIIKE, Haruo OKANO, Masahiro SHIBAGAKI, TOSHIBA, R & D CENTER, KANAGAWA, JAPAN
Technique de lift-off utiiisant un masque muiticouche pour la realisation de structures
metalliques a trait fin
211
Lift-off technique using multilayer mask for fine line metal patterning
F. MARTINET, J.L. CLARET, M. NELLO, J.C. JESIONKA, IBM FRANCE, CORBEIL-ESSONNES,
FRANCE
Traitement rapide de stabilisation des resines sous plasma hyperfrequences
Fast plasma hardening of microwave resist layers
215
B. CHARLET, L. PECCOUD, CENG/LETI-CE/MSC, GRENOBLE, FRANCE
Comparaison des performances de gravure de /'aluminium parpiasma et par gravure ionique reactive
221
Aluminium-etching: performance comparison between planar and RIE techniques
L. PECCOUD, CENG/LETI, GRENOBLE, FRANCE
Gravure anisotrope de SiO2 dans un systeme RIE plasmatherm
Anisotropic etching of SiO2 in a parallel plate plasmatherm-RIE-system
907
W.G.M. VAN DEN HOEK, R.D.J. VERHAAR, PHILIPS RESEARCH LABORATORIES, EINDHOVEN, THE NETHERLANDS
Gravure ionique reactive du polysilicium : evaluation d'un equipement a plaquette unitaire
232
Reactive ion etching of poly silicon: evaluation of a single wafer processing machine
C. DE PROST, T. FRIED, MATRA HARRIS SEMICONDUCTEURS, NANTES, FRANCE
TABLE
RONDE
17 H 45
19 H 00
SOURCES
DE RAYONNEMENT POUR
LA MICROLITHOGRAPHIE
PANEL
DISCUSSION
17.45
19.00
SOURCES FOR
MICROLITHOGRAPHY
289
VENDREDI 8 OCTOBRE
FRIDAY, OQOBER 8th
SESSION VIII
9 H 00
12H40
President .
cnairman
RESINES
COUCHES SENSIBLES
Jean.C|aude
9.00
12.40
RESISTS
DUBOIS, THOMSON-CSF/LCR, ORSAY, FRANCE
Conference invitee :
Resines pour le masquage par electrons et par rayons X
237
Invited paper:
Electron and X-ray irradiation of polymers and its application to resists for microlhhography
F. SCHUE, B. SERRE, L. GIRAL, C. MONTGINOUL, USTL, MONTPELLIER, FRANCE
Comparaison des resines utilis6es en microlithographie
Comparison of positive photoresists for microlithographie applications
254
DIETRICH MEYERHOFER, RCA LABORATORIES, PRINCETON, USA
Resines pour UV lointain mettant en ceuvre un m6canisme d'amplification
chimique
Sensitive deep UV resist incorporating chemical amplification
260
J.M.J. FRECHET, UNIVERSITY OF OTTAWA, CANADA
HIROSHI ITO, C. GRANT WILLSON, IBM RESEARCH LABORATORY, SAN JOSE, USA
L'amplification chimique appliqu6e au d6veloppement de polymeres utilisables comme
resines de lithographie
61
cu
Chemical amplification in the design of polymers for resist application
C. GRANT WILLSON, HIROSHI ITO, IBM RESEARCH LABORATORY, SAN JOSE, USA
J.M.J. FRECHET, UNIVERSITY OF OTTAWA, CANADA
L'utilisation du poly-6thylene-oxyde pour am6liorer les caracteristiques du polymethylmethacrylate comme 6/ectro-r6sine
262
The use of poly (ethylene oxide) to improve the exposure characteristics of poly (methyl
methacrylate) electron resists
D.R. COWLEY, C.J. HARDY, R.H. MOBBS, C. PRICE, UNIVERSITY OF MANCHESTER, UK
Le poly-4-chlorostyrene : une nouvelle e/ectroresine negative a fort contraste
Po/y-4-ch/orostyrene, a new high contrast negative E. beam resist
266
J. LIUTKUS, J. PARASZCZAK, J. SHAW, M. HATZAKIS, IBM T.J. WATSON RESEARCH CENTER, YORKTOWN HEIGHTS, USA
Nanolithographie utiiisant /'insolation eiectronique de couches de verre de chalcoq6nure
amorphe
270
Nano-lithography in amorphous chalcogenide glasses by E. beam exposure
B. SINGH, S.P. BEAUMONT, P.G. BOWER, C.D.W. WILKINSON, UNIVERSITY OF GLASGOW,
UK
Lithographie optique submicronique rapide utiiisant un proc6d6 sec pour le developpement et le transfert de /'image
21 §
Fast, sub-micron optical lithography employing dry development and dry image transfer
STEVEN A. LIS, JEROME M. LAVINE, JOSEPH I. MASTERS, GCA CORPORATION, BEDFORD,
USA
Influence de diff6rents substituants 6/ectron-attracteurs sur les performances de resines
positives de type acry/ique en microlithographie
285
Influence of various electro-attractive substituents on the performances of acrylic type
positive resists in microlithography
F. SCHUE, B. SERRE, USTL, LABORATOIRE DE CHIMIE MACROMOLECULAIRE, MONTPELLIER, FRANCE
A. ERANIAN, E. DATAMANTI, J.C. DUBOIS, THOMSON-CSF, ORSAY, FRANCE
C. MONTGINOUL, L. GIRAL, USTL, LABORATOIRE DE CHIMIE ORGANIQUE STRUCTURALE,
MONTPELLIER, FRANCE
MERCREDI 6 OCTOBRE, 9 H 00,
AU VENDREDI 8 OCTOBRE, 12 H 00
SESSION
CONFERENCES AFFICHEES
FROM WEDNESDAY, OCTOBER 6th, 9.00
TO FRIDAY, OCTOBER 8th, 12.00
• ^ • ^ • ^ —
P0STER PAPER
SESSION
Laser imaging photoresist systems for microcircuits
239
CHRISTIAN DECKER, LABORATOIRE DE PHOTOCHIMIE GENERALE (CNRS), ECOLE NATIONALE SUPERIEURE DE CHIMIE, MULHOUSE, FRANCE
Shaping of profiles in aluminium by plasma etching
304
A. BEGUIN, R. FABIEN, RTC LA RADIOTECHNIQUE COMPELEC, CAEN, FRANCE
An algorithm for proximity effect correction with E. beam exposure
309
W.T. LYNCH, T.E. SMITH, W. FICHTNER, BELL LABORATORIES, MURRAY HILL, USA
Improved determination of proximity effect-parameters by Monte-Carlo simulations 315
ERSNT FROSCHLE, HEINRICH THEODOR VIERHAUS, UNIVERSITY OF SIEGEN, FRG
Electrical measurements of the misalignment between gate and diffusion regions in
M OS/LSI technology
319
A. CHECIELEWSKA, A.A. CZERWlNSKI, M. JANISZEWSKA, INSTITUTE OF ELECTRON TECHNOLOGY, WARSZAWA, POLAND
Fabrication of multilayer lift-off masks for single step submicron circuitry using an optical
microscope
323
O. LIENGME, P. MARTINOLI, INSTITUT DE PHYSIQUE, UNIVERSITE DE NEUCHATEL, SWITZERLAND
Modelling of electron beam columns for lithography
328
G.A.C. JONES, V.R.M. RAO, H. AHMED, ENGINEERING DEPARTMENT, CAMBRIDGE UNIVERSITY, CAMBRIDGE, UK
Profile modification of resist patterns in optical lithography
334
F.A. VOLLENBROEK, E.J. SPIERTZ, PHILIPS RESEARCH LABORATORIES, EINDHOVEN, THE
NETHERLANDS
Trimming of negative electron resist for multilevel metallization
338
E. HIEKE, W. BEINVOGL, SIEMENS LABORATORIES, MUNCHEN, FRG
Measurement of the effect of secondary electrons on the resolution limit of PMMA
341
S.A. RISHTON, S.P. BEAUMONT, C.D.W. WILKINSON, DEPARTMENT OF ELECTRONICS
AND ELECTRICAL ENGINEERING, UNIVERSITY OF GLASGOW, UK
Continuously moving table vector scan electron beam lithography
347
A.D. WILSON, R.A. FLAVIN, J. CONTE, T.H.P. CHANG, IBM T.J. WATSON RESEARCH CENTER, YORKTOWN HEIGHTS, USA
Very high resolution alignment of E. beam written patterns
351
W.S. MACKIE, S.P. BEAUMONT, P.G. BOWER, C.D.W. WILKINSON, DEPARTMENT OF ELECTRONIC AND ELECTRICAL ENGINEERING, UNIVERSITY OF GLASGOW, UK
Processing characteristics of a new positive photoresist system
357
D.J. ELLIOT, R.G. CUNNINGHAM, C. CERNIGLIARO, SHIPLEY, NEWTON, USA
Comportement des electrons resists monomol6culaires lors de la gravure par plasma
reactif et par gravure ionique reactive
352
C. ROSILIO, DEIN/LERA, CEN SACLAY, FRANCE
Characteristics of X-ray plasma source applied to microlithography
368
Yu. A. AGAFONOV, V.V. ARISTOV, G.I. KOKHANCHIK, USSR ACADEMY OF SCIENCES,
SOLID-STATE PHYSICS INSTITUTE, MOSCOW, USSR.