Microcapteurs de pression
Transcription
Microcapteurs de pression
P O U R Microcapteurs de pression par E N Ali BOUKABACHE Maître de conférences à l’Institut d’électronique de l’Université de Constantine Philippe MENINI Maître de conférences à l’Université Toulouse 3 et Patrick PONS Laboratoire d’Analyse et d’Architecture des Systèmes du Centre National de la Recherche Scientifique (LAAS-CNRS) Références bibliographiques [1] BLASQUEZ (G.) et al. – Static response of miniature capacitive pressure sensors with square or rectangular diaphragm. Revue de Physique Appliquée, 22, p. 505-510 (1987). [9] [2] TIMOSHENKO (S.). – Theory of plates and shells. MacGraw Hill. [10] [3] HOPPE (K.) et al. – Integrated Mach-Zehnder interferometer pressure transducers. Transducers'95, Stockholm, 25-29 juin 1995. [4] WELHAM (C.J.) et al. – A lateral resonant pressure sensor fabricated via fusion bonding, wafer thinning and reactive ion etching. Eurosensors XII, Southampton, 13-16 sept. 1998. [5] SVENSSON (L.) et al. – Surface micromachined technology applied to the fabrication of a FET pressure sensor. MME'95, Copenhagen, 3-5 sept. 1995. [11] [12] [13] [6] KANDA (Y.). – Piezoresistance effect of silicon. Sensors and Actuators, A28, p. 83-91 (1991). [14] [7] PETERSEN (K.E.). – Silicon as mechanical material. Proceedings of the IEEE, vol. 70, no 5, mai 1982. [15] [8] DIEM (B.) et al. – SOI SIMOX ; from bulk to surface micromachining, a new age for silicon sensors and actuators. Sensors & actuators A46-47, p. 8-16 (1995). [16] KIIHAMAKI (J.) et al. – Deep silicon etching in inductively coupled plasma reactor for mems. Physica scripta. T, vol. 79, p. 250-254 (1999). GUCKEL (R.). – Surface micromachined pressure transducers. Sensors & Actuators A28, p. 133-146 (1991). PEDERSEN (M.) et al. – An IC compatible polyimide pressure sensor with capacitive readout. Sensors & Actuators A63, p. 163-168 (1997). KROETZ (G.H.) et al. – Silicon compatible materials for harsh environnement sensors. Sensors and Actuators, A74, p. 182-189 (1999). KRASSOW (H.) et al. – Photolithographic packaging of silicon pressure sensors. Sensors and Actuators A66, p. 279-283 (1998). BOUKABACHE (A.) et al. – Study of the thermal drift of the offset voltage of silicon pressure sensor. ICECS’99, Phaphos (Grèce), 5-8 sept. 1999. PUERS (R.). – Capacitive sensors : when and how to use them. Sensors and Actuators A37-38, p. 93-105 (1993). PONS (P.) et al. – Low-cost high-sensitivity integrated pressure and temperature sensor. Sensors and Actuators A41-42, p. 398-401 (1994). [17] PUERS (R.) et al. – A capacitive pressure sensor with low impedance output and active suppression of parasitic effects. Sensors and Actuators A21-23, p. 108-114 (1990). [18] REY (P.) et al. – A high capacitive pressure sensor array for fingerprint sensor application. Transducers 97, Chicago 16-19 juin 1997. [19] GILLEO (K.) et al. – Towards a better understanding of underfill encapsulation for flip chip technology : proposed developments for the future. Microelectronics international, vol. 16, no 2, p. 39-43 (1999). [20] MÉNINI (Ph.) et al. – Optimization of a BICMOS integrated transducer for self-compensated capacitive pressure sensor. ICECS'99, Paphos (Grèce), 5-8 sept. 1999. [21] FLANDRE (D.) et al. – High-temperature characteristics of CMOS devices and circuits on Silicon-on-Insulator (SOI) substrates. Proceedings of IX SBMICRO 94, Rio de Janeiro, p. 777-786 (1994). [22] ELOY (J.C.) et al. – Micro Technologies – Micro Systèmes : Marché mondial et position de la France. Rapport de synthèse pour le ministère de l'Industrie, CEA/LETI Bureau d'étude Marketing, nov. 1995. Adresses sur le WEB Fabricants de microcapteurs de pression automobiles Sensym : http://www.sensym.com Motorola : http://www.motorola.com Novasensor : http://www.novasensor.com Sensonor : http://www.sensonor.com Bosch : http://www.bosch.de Kistler : http://www.kistler.fr Druck : http://www.druck.com Kulite : http://www.kulite.com Texas Instrument : http://www.ti.com Toute reproduction sans autorisation du Centre français d’exploitation du droit de copie est strictement interdite. − © Techniques de l’Ingénieur, traité Mesures et Contrôle Doc. R 2 070 − 1 S A V O I R P L U S