PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C

PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
•
Hermetic Metal TO3 Package.
•
Ideal for General Purpose Low Frequency Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEO
VCBO
VEBO
ICM
IB
PD
TJ
Tstg
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
De-rate Linearly Above 25°C
Junction Temperature Range
Storage Temperature Range
BDX66
-60V
-60V
66A 66B 66C
-80V -100V -120V
-80V -100V -120V
-5V
-20A
-0.25A
150W
0.855 W/°C
-55 to +200°C
-55 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
Units
1.17
°C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 1 of 3
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
(1)
V(BR)CEO
ICEO
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = -100mA
VCE =0.5×VCEO(max)
IE = 0
Collector-Base Cut-Off
Current
ICBO
IE = 0
TJ =200°C
IEBO
Min.
BDX66
-60
BDX66A
-80
BDX66B
-100
BDX66C
-120
Typ.
-1.0
VCB =VCBO(max)
BDX66
VCB = -50V
BDX66A
VCB = -60V
BDX66B
VCB = -70V
BDX66C
-1.0
mA
-5
Emitter Cut-Off Current
VEB = -5V
IC = 0
-5
Collector-Emitter Saturation
Voltage
IC = -10A
IB = -40mA
-2
VBE
Base-Emitter Voltage
IC = -10A
VCE = -3V
-2.5
VF
Diode Forward Voltage
IF = 10A
(1)
VCE(sat)
(1)
hFE
Forward-current transfer
ratio
V
2
IC = -1.0A
(1)
Units
V
IB =0
VCB = -40V
Max.
VCE = -3V
IC = -10A
IC = -16A
2000
-
1000
1000
DYNAMIC CHARACTERISTICS
hfe
Magnitude of common
emitter small-signal shortcircuit forward current
transfer ratio
Cobo
Output Capacitance
ton
Turn-On Time
IC = -10A
toff
Turn-Off Time
-IB1 = IB2 = 40mA
IC = -5A
VCE = -3V
50
-
300
pF
f = 1.0MHz
VCB = -10V
IE = 0
f = 1.0MHz
VCC = -12V
1.0
3.5
µS
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 2 of 3
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1
1.52 (0.06)
3.43 (0.135)
2
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO-3 (TO-204AA)
Pin 1 – Base
Pin 2 – Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Case – Collector
Website: http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 3 of 3