Silicon Diffused Power Transistor BU2527DF

Silicon Diffused Power Transistor BU2527DF

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
Collector-emitter voltage peak value
VBE = 0 V
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
PINNING - SOT199
PIN
Ths ≤ 25 ˚C
IC = 8.0 A; IB = 1.6 A
f = 64 kHz
ICsat = 6.0 A; f = 64 kHz
PIN CONFIGURATION
TYP.
MAX.
UNIT
-
1500
V
6.0
1.7
800
12
30
45
5.0
2.0
V
A
A
W
V
A
µs
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
c
case
b
Rbe
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
12
30
8
12
200
7
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
3.7
K/W
-
2.8
K/W
35
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
110
55
13.5
-
-
mA
Ω
V
V
5
-
11
7
1.6
5.0
1.1
10
2.0
V
V
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
REB
BVEBO
VCEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
IB = 0 A;IC = 100mA;
L = 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (64 kHz line
deflection circuit)
ICsat = 6.0 A; LC = 170 µH;
Cfb = 5.4 nF; IB(end) = 0.55 A;
LB = 0.6 µH; -VBB = 4 V;-IBM = 3.6 A
1.7
0.1
2.0
0.2
µs
µs
IF = 8 A; dIF/dt = 50 A/µs
16
-
V
VF = 5 V
410
-
ns
ts
tf
Turn-off storage time
Turn-off fall time
Vfr
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
tfr
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU2527DF
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IB
I B end
t
5 us
D.U.T.
6.5 us
LB
IBend
Cfb
16 us
VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
VCC
ICsat
90 %
IC
LC
10 %
tf
t
VCL
IBend
ts
LB
IB
IBend
-VBB
Rbe
CFB
T.U.T.
t
- IBM
Fig.5. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 200 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A
Fig.2. Switching times definitions.
I
I
F
BU2525DF
hFE
F
100
Tj = 25 C
Tj = 125 C
5V
10%
time
t fr
V
10
F
1V
V
5V
V
fr
F
1
0.1
time
10
100
IC / A
Fig.3. Definition of anti-parallel diode Vfr and tfr
September 1997
1
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
1.2
VBESAT / V
1.1
BU2527DF
BU2525AF
VCESAT / V
10
BU2525AF
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1
0.9
8A
0.8
1
6A
IC/IB=
0.7
3
0.6
5A
4
0.5
IC = 4 A
5
0.4
0.1
1
IC / A
0.1
10
0.1
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
1
VCESAT / V
1
IB / A
10
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
BU2525AF
BU2527AF
Poff / W
100
IC/IB =
0.9
5
0.8
4
0.7
IC =
3
0.6
6A
10
0.5
5A
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
1
0.1
1
100
10
0
0.2 0.4 0.6 0.8
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
1.2
VBESAT / V
1 1.2 1.4 1.6 1.8
IB / A
2
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 64 kHz
BU2525AF
4
BU2527AF
ts, tf / us
Tj = 25 C
3.5
Tj = 125 C
1.1
3
1
2.5
0.9
2
IC=
0.8
IC =
1.5
6A
8A
1
6A
5A
4A
0.7
0.6
0
1
2
IB / A
3
0.5
0
4
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
IB / A
2
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
September 1997
5A
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
Normalised Power Derating
PD%
120
BU2527DF
IC / A
BU2527AF
30
with heatsink compound
110
100
90
80
70
20
60
50
40
10
30
20
10
0
0
20
40
60
80
Ths / C
100
120
0
140
500
1000
1500
VCE / V
Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
10
0
Zth / (K/W)
BU2525AF
IC / A
BU2525AF
100
tp =
0.5
1
0.1
0.2
0.1
0.05
ICM
0.02
ICDC
40 us
PD
0.01
D=0
0.001
1E-06
= 0.01
tp
D=
1E-02
t/s
100 us
t
T
1E-04
10
tp
T
1E+00
Ptot
Fig.14. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.16. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DF
MECHANICAL DATA
Dimensions in mm
15.3 max
Net Mass: 5.5 g
5.2 max
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
2.1 max
5.45
3
1.2
1.0
0.7 max
0.4 M
2.0
5.45
Fig.17. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200
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